NSN 5962014082869, Microcircuit Memory Part

The parts under NSN 5962-01-408-2869 of Microcircuit Memory manufactured by Samsung Semiconductor Inc, Nec Electronics Usa Inc, Hitachi Ltd is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5962-01-408-2869 from this webpage, and one of our account managers will give you a quote for parts like K6T1008C2EDB7000, PD431000ACZ-70L, UPD431000ACZ-70L, HM628128LP-7 within fifteen minutes.

Alternative NSN: 5962-01-408-2869
Item Name:Microcircuit Memory
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 014082869
NCB Code: USA (01)
Manufacturers: Hitachi Ltd , Nec Electronics Usa Inc , Samsung Semiconductor Inc
Part No Manufacturer Item Name QTY RFQ
K6T1008C2EDB7000 samsung semiconductor inc microcircuit memory Avl RFQ
PD431000ACZ-70L nec electronics usa inc microcircuit memory Avl RFQ
UPD431000ACZ-70L nec electronics usa inc microcircuit memory Avl RFQ
HM628128LP-7 hitachi ltd microcircuit memory Avl RFQ

Characteristics Data of NSN 5962014082869

MRCCriteriaCharacteristic
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS
AFGAOPERATING TEMP RANGE+0.0 TO 70.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
AGAVEND ITEM IDENTIFICATIONREMOTE TERMINAL UNIT, WLB-RTU (1 TO 10)
CBBLFEATURES PROVIDED3-STATE OUTPUT
CQSJINCLOSURE MATERIALPLASTIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQZPINPUT CIRCUIT PATTERN8 INPUT
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYCMOS STATIC RAM
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
CZERMEMORY DEVICE TYPERAM
FEATSPECIAL FEATURES128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY
TTQYTERMINAL TYPE AND QUANTITY32 FLAT LEADS

Relevant NSN Catalog for 5962-01-408-2869, 5962014082869

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