With our selection consisting of popular NSN 5962-01-375-7492 part numbers like 15-1326286-1, and other relevant offerings, ASAP Aviation Stock serves as the premier purchasing platform for fulfilling countless project needs. As you explore our catalog for NSN 5962-01-375-7492 on this page, take note that we have provided a variety of data and resources to aid you in your search for exact items. If any Microcircuit Memory listing that we have featured piques your interest, you can always click on the “RFQ” button next to it to access a quote request form that can be submitted at any time to receive procurement options from our staff.
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| Alternative NSN: 5962-01-375-7492 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013757492 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , General Dynamics Corporation , Gte Corp , Gte Government Systems Corp |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 15-1326286-1 | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| 15-1326286-1 | general dynamics corporation | microcircuit memory | Avl | RFQ |
| 15-1326286-1 | gte corp | microcircuit memory | Avl | RFQ |
| 15-1326286-1 | gte government systems corp | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | ADAU | BODY HEIGHT0 200 INCHES MINIMUM AND 0 220 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONHACRMPE REACT BASIC |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC5 00 MICROAMPERES MAXIMUM INPUT |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 6 VOLTS MINIMUM TOTAL SUPPLY AND 7 0 VOLTS MAXIMUM TOTAL SUPPLY |
| MEMORY | CZER | MEMORY DEVICE TYPEEPROM |
| MEMORY | FEAT | SPECIAL FEATURESELECTROSTATIC DISCHARGE SENSHARDNESS CRITICAL ITEM SELECTED ITEM SELECTED FROM PN 5962-8961404MXX OR 5962-8961405MXXCAGE 67268 |
| MEMORY | ADAT | BODY WIDTH0 585 INCHES MINIMUM AND 0 605 INCHES MAXIMUM |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITPROM128K X 8 27C010 MICROCIRCUITMEMORY DIGITALCMOS 128K X 8-BIT UVEPROMMONOLITHIC SILICON |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MINIMUM ACCESS AND 170 00 NANOSECONDS MAXIMUM ACCESS |
| MEMORY | CZZZ | MEMORY CAPACITY128K X 8 |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY32 PRINTED CIRCUIT |
| MEMORY | ADAQ | BODY LENGTH1 660 INCHES MINIMUM AND 1 680 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING330 0 MILLIWATTS |
| MEMORY | CBBL | FEATURES PROVIDEDBURN IN MIL-STD-883 CLASS B AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND RADIATION HARDENED AND ULTRAVIOLET ERASABLE AND TESTED TO MIL-STD-883 AND SELECTED ITEM |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | NHCF | NUCLEAR HARDNESS CRITICAL FEATUREHARDENED |
| MEMORY | SPCL | SPECIAL TEST FEATURESSELECTED AND TESTED FOR RADIATION HARDNESS |
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