The parts under NSN 5962-01-365-5109 of Microcircuit Memory manufactured by Integrated Device Technology Inc, E2v Inc, Dla Land And Maritime is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5962-01-365-5109 from this webpage, and one of our account managers will give you a quote for parts like IDT7203S30TDB, CY7C429-30DMB, 5962-8866905YX, 5962-8866904YX, 5962-8866905YA within fifteen minutes.
Alternative NSN: 5962-01-365-5109 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 013655109 |
NCB Code: USA (01) |
Manufacturers: Dla Land And Maritime , E2v Inc , Integrated Device Technology Inc |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
IDT7203S30TDB | integrated device technology inc | microcircuit memory | Avl | RFQ |
CY7C429-30DMB | e2v inc | microcircuit memory | Avl | RFQ |
5962-8866905YX | dla land and maritime | microcircuit memory | Avl | RFQ |
5962-8866904YX | dla land and maritime | microcircuit memory | Avl | RFQ |
5962-8866905YA | dla land and maritime | microcircuit memory | Avl | RFQ |
5962-88669 | dla land and maritime | microcircuit memory | Avl | RFQ |
5962-8866905YB | dla land and maritime | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.430 INCHES MINIMUM AND 1.485 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | 1430010876330 E/I FSCM 18876 |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,DIGITAL,CMOS,2K X 9 FIRST-IN FIRST-OUT,MONOLITHIC SILCON |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED |
CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
TEST | TEST DATA DOCUMENT | 67268-5962-88669 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
ZZZK | SPECIFICATION/STANDARD DATA | 96906-MIL-STD-883 GOVERNMENT STANDARD |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
ADAU | BODY HEIGHT | 0.155 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
CZEQ | TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS AF OUTPUT MEGAWATTS |
CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT |
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