NSN 5962013655109, Microcircuit Memory Part

The parts under NSN 5962-01-365-5109 of Microcircuit Memory manufactured by Integrated Device Technology Inc, E2v Inc, Dla Land And Maritime is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5962-01-365-5109 from this webpage, and one of our account managers will give you a quote for parts like IDT7203S30TDB, CY7C429-30DMB, 5962-8866905YX, 5962-8866904YX, 5962-8866905YA within fifteen minutes.

Alternative NSN: 5962-01-365-5109
Item Name:Microcircuit Memory
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 013655109
NCB Code: USA (01)
Manufacturers: Dla Land And Maritime , E2v Inc , Integrated Device Technology Inc
Part No Manufacturer Item Name QTY RFQ
IDT7203S30TDB integrated device technology inc microcircuit memory Avl RFQ
CY7C429-30DMB e2v inc microcircuit memory Avl RFQ
5962-8866905YX dla land and maritime microcircuit memory Avl RFQ
5962-8866904YX dla land and maritime microcircuit memory Avl RFQ
5962-8866905YA dla land and maritime microcircuit memory Avl RFQ
5962-88669 dla land and maritime microcircuit memory Avl RFQ
5962-8866905YB dla land and maritime microcircuit memory Avl RFQ

Characteristics Data of NSN 5962013655109

MRCCriteriaCharacteristic
ADAQBODY LENGTH1.430 INCHES MINIMUM AND 1.485 INCHES MAXIMUM
ADATBODY WIDTH0.245 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
AGAVEND ITEM IDENTIFICATION1430010876330 E/I FSCM 18876
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CTQXCURRENT RATING PER CHARACTERISTIC20.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE
CWSGTERMINAL SURFACE TREATMENTSOLDER
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT,DIGITAL,CMOS,2K X 9 FIRST-IN FIRST-OUT,MONOLITHIC SILCON
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED
CZESHYBRID TECHNOLOGY TYPEMONOLITHIC
TESTTEST DATA DOCUMENT67268-5962-88669 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT
ZZZKSPECIFICATION/STANDARD DATA96906-MIL-STD-883 GOVERNMENT STANDARD
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
ADAUBODY HEIGHT0.155 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
CZEQTIME RATING PER CHACTERISTIC30.00 NANOSECONDS AF OUTPUT MEGAWATTS
CZERMEMORY DEVICE TYPEFIRST-IN FIRST-OUT

Relevant NSN Catalog for 5962-01-365-5109, 5962013655109

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