The parts under NSN 5962-01-359-3247 of Microcircuit Memory manufactured by Thales Usa Inc, Bae Systems Operations Limited Dba Bae Systems Plc, Cypress Semiconductor Inc, Honeywell International Inc, E2v Inc is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5962-01-359-3247 from this webpage, and one of our account managers will give you a quote for parts like 115715-0005, 5962-9061102X, CY7C344-25WMB, 8517844-401, 5962-9061102XX within fifteen minutes.
| Alternative NSN: 5962-01-359-3247 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013593247 |
| NCB Code: USA (01) |
| Manufacturers: Altera Corporation , Bae Systems Operations Limited Dba Bae Systems Plc , Cypress Semiconductor Inc , E2v Inc , Honeywell International Inc , Thales Usa Inc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 115715-0005 | thales usa inc | microcircuit memory | Avl | RFQ |
| 5962-9061102X | bae systems operations limited dba bae systems plc | microcircuit memory | Avl | RFQ |
| CY7C344-25WMB | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| 8517844-401 | honeywell international inc | microcircuit memory | Avl | RFQ |
| CY7C344-25WMB | e2v inc | microcircuit memory | Avl | RFQ |
| 5962-9061102XX | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| 625277 | bae systems operations limited dba bae systems plc | microcircuit memory | Avl | RFQ |
| EPM5032DM883B | altera corporation | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1500 0 MILLIWATTS |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC300 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | ADAT | BODY WIDTH0 240 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND BIDIRECTIONAL AND WCLOCK AND WENABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC10 00 INPUT PICOFARADS MAXIMUM AND 12 00 OUTPUT PICOFARADS MAXIMUM |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | ADAQ | BODY LENGTH1 485 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 115 INCHES MINIMUM AND 0 195 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN24 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
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