NSN 5962012703486, Microcircuit Memory Part

The parts under NSN 5962-01-270-3486 of Microcircuit Memory manufactured by Epson Electronics America Inc, Rockwell Collins Inc, Integrated Device Technology Inc, Hitachi Ltd, Bae Systems Operations Limited Dba Bae Systems Plc is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5962-01-270-3486 from this webpage, and one of our account managers will give you a quote for parts like IDT6116SA150DB, 351-5642-042, HM6116-3, 9481-00085, 6116S150DB within fifteen minutes.

Alternative NSN: 5962-01-270-3486
Item Name:Microcircuit Memory
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 012703486
NCB Code: USA (01)
Manufacturers: Bae Systems Operations Limited Dba Bae Systems Plc , Epson Electronics America Inc , Hitachi Ltd , Industrial Electronic Engineers , Integrated Device Technology Inc , Rockwell Collins Inc
Part No Manufacturer Item Name QTY RFQ
IDT6116SA150DB epson electronics america inc microcircuit memory Avl RFQ
351-5642-042 rockwell collins inc microcircuit memory Avl RFQ
IDT6116SA150DB integrated device technology inc microcircuit memory Avl RFQ
HM6116-3 hitachi ltd microcircuit memory Avl RFQ
9481-00085 bae systems operations limited dba bae systems plc microcircuit memory Avl RFQ
6116S150DB integrated device technology inc microcircuit memory Avl RFQ
47185-01 industrial electronic engineers microcircuit memory Avl RFQ

Characteristics Data of NSN 5962012703486

MRCCriteriaCharacteristic
AEHXMAXIMUM POWER DISSIPATION RATING550.0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDSTATIC OPERATION AND HIGH SPEED AND ASYNCHRONOUS
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CQZPINPUT CIRCUIT PATTERN14 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.0 VOLTS NOMINAL POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
CZERMEMORY DEVICE TYPEROM
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
TTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

Relevant NSN Catalog for 5962-01-270-3486, 5962012703486

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