The parts under NSN 5962-01-267-8169 of Microcircuit Memory manufactured by Nec Electronics Usa Inc, Pyramid Semiconductor Corp, Integrated Device Technology Inc, Cypress Semiconductor Inc, Hamilton Sundstrand Corporation is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5962-01-267-8169 from this webpage, and one of our account managers will give you a quote for parts like UPD2167, P4C167L-55LMB, IDT6167LA55LB, CY7C167-55DMB, CY7C167-55 within fifteen minutes.
Alternative NSN: 5962-01-267-8169 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012678169 |
NCB Code: USA (01) |
Manufacturers: Cypress Semiconductor Inc , Hamilton Sundstrand Corporation , Integrated Device Technology Inc , Nec Electronics Usa Inc , Paaesikunta Logistiikkaosasto , Pyramid Semiconductor Corp |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
UPD2167 | nec electronics usa inc | microcircuit memory | Avl | RFQ |
P4C167L-55LMB | pyramid semiconductor corp | microcircuit memory | Avl | RFQ |
IDT6167LA55LB | integrated device technology inc | microcircuit memory | Avl | RFQ |
CY7C167-55DMB | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
CY7C167-55 | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
795066-1 | hamilton sundstrand corporation | microcircuit memory | Avl | RFQ |
10133816 | paaesikunta logistiikkaosasto | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.425 INCHES NOMINAL |
ADAT | BODY WIDTH | 0.290 INCHES NOMINAL |
ADAU | BODY HEIGHT | 0.065 INCHES NOMINAL |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 17 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 20 LEADLESS |
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