NSN 5962012678169, Microcircuit Memory Part

The parts under NSN 5962-01-267-8169 of Microcircuit Memory manufactured by Nec Electronics Usa Inc, Pyramid Semiconductor Corp, Integrated Device Technology Inc, Cypress Semiconductor Inc, Hamilton Sundstrand Corporation is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5962-01-267-8169 from this webpage, and one of our account managers will give you a quote for parts like UPD2167, P4C167L-55LMB, IDT6167LA55LB, CY7C167-55DMB, CY7C167-55 within fifteen minutes.

Alternative NSN: 5962-01-267-8169
Item Name:Microcircuit Memory
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 012678169
NCB Code: USA (01)
Manufacturers: Cypress Semiconductor Inc , Hamilton Sundstrand Corporation , Integrated Device Technology Inc , Nec Electronics Usa Inc , Paaesikunta Logistiikkaosasto , Pyramid Semiconductor Corp
Part No Manufacturer Item Name QTY RFQ
UPD2167 nec electronics usa inc microcircuit memory Avl RFQ
P4C167L-55LMB pyramid semiconductor corp microcircuit memory Avl RFQ
IDT6167LA55LB integrated device technology inc microcircuit memory Avl RFQ
CY7C167-55DMB cypress semiconductor inc microcircuit memory Avl RFQ
CY7C167-55 cypress semiconductor inc microcircuit memory Avl RFQ
795066-1 hamilton sundstrand corporation microcircuit memory Avl RFQ
10133816 paaesikunta logistiikkaosasto microcircuit memory Avl RFQ

Characteristics Data of NSN 5962012678169

MRCCriteriaCharacteristic
ADAQBODY LENGTH0.425 INCHES NOMINAL
ADATBODY WIDTH0.290 INCHES NOMINAL
ADAUBODY HEIGHT0.065 INCHES NOMINAL
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND W/ENABLE
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONLEADLESS FLAT PACK
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CQZPINPUT CIRCUIT PATTERN17 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC7.0 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPERAM
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
TTQYTERMINAL TYPE AND QUANTITY20 LEADLESS

Relevant NSN Catalog for 5962-01-267-8169, 5962012678169

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