With our selection consisting of popular NSN 5962-01-264-0761 part numbers like AM27S49A BJA, ROM PROM HEAD 241, 8200902JA, 8200902JB, 82009, and other relevant offerings, ASAP Aviation Stock serves as the premier purchasing platform for fulfilling countless project needs. As you explore our catalog for NSN 5962-01-264-0761 on this page, take note that we have provided a variety of data and resources to aid you in your search for exact items. If any Microcircuit Memory listing that we have featured piques your interest, you can always click on the “RFQ” button next to it to access a quote request form that can be submitted at any time to receive procurement options from our staff.
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| Alternative NSN: 5962-01-264-0761 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012640761 |
| NCB Code: USA (01) |
| Manufacturers: 2 Mb Distribution , Advanced Micro Devices Inc , Dla Land And Maritime , National Semiconductor Corp , Philips Semiconductors Inc , Thales Underwater Systems Ltd , Thomson Sintra Activites Sous |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| AM27S49A BJA | 2 mb distribution | microcircuit memory | Avl | RFQ |
| AM27S49A BJA | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| ROM PROM HEAD 241 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 8200902JA | dla land and maritime | microcircuit memory | Avl | RFQ |
| 8200902JB | dla land and maritime | microcircuit memory | Avl | RFQ |
| 82009 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 8200902JX | dla land and maritime | microcircuit memory | Avl | RFQ |
| 93Z5665DMQB55 | national semiconductor corp | microcircuit memory | Avl | RFQ |
| 82HS641A BJA | philips semiconductors inc | microcircuit memory | Avl | RFQ |
| 91604432 | thales underwater systems ltd | microcircuit memory | Avl | RFQ |
| 91604432 | thomson sintra activites sous | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.04 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND 3-STATE OUTPUT AND MONOLITHIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| FEAT | SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEMS |
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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