With our selection consisting of popular NSN 5962-01-264-0758 part numbers like AM27S49 B3A, AM27S49 B3C, 82009013A, 82009013X, 82009, and other relevant offerings, ASAP Aviation Stock serves as the premier purchasing platform for fulfilling countless project needs. As you explore our catalog for NSN 5962-01-264-0758 on this page, take note that we have provided a variety of data and resources to aid you in your search for exact items. If any Microcircuit Memory listing that we have featured piques your interest, you can always click on the “RFQ” button next to it to access a quote request form that can be submitted at any time to receive procurement options from our staff.
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| Alternative NSN: 5962-01-264-0758 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012640758 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Dla Land And Maritime , Philips Semiconductors Inc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| AM27S49 B3A | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| AM27S49 B3C | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| 82009013A | dla land and maritime | microcircuit memory | Avl | RFQ |
| 82009013X | dla land and maritime | microcircuit memory | Avl | RFQ |
| 82009 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 82009013B | dla land and maritime | microcircuit memory | Avl | RFQ |
| 82HS641 B3A | philips semiconductors inc | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 460 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 460 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 100 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 04 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CRHL | BIT QUANTITY65536 |
| MEMORY | CSWJ | WORD QUANTITY8192 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC190 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC10 00 INPUT PICOFARADS MAXIMUM AND 13 00 OUTPUT PICOFARADS MAXIMUM |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC100 00 NANOSECONDS MAXIMUM DELAY |
| MEMORY | CZER | MEMORY DEVICE TYPEPROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 LEADLESS |
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