The parts under NSN 5962-01-236-1158 of Microcircuit Memory manufactured by Hitachi Ltd, Hekimian Laboratories Inc is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5962-01-236-1158 from this webpage, and one of our account managers will give you a quote for parts like HM6116P-4, 07H06116 within fifteen minutes.
Alternative NSN: 5962-01-236-1158 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012361158 |
NCB Code: USA (01) |
Manufacturers: Hekimian Laboratories Inc , Hitachi Ltd |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
HM6116P-4 | hitachi ltd | microcircuit memory | Avl | RFQ |
07H06116 | hekimian laboratories inc | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 32.0 MILLIMETERS NOMINAL |
ADAT | BODY WIDTH | 13.4 MILLIMETERS NOMINAL |
ADAU | BODY HEIGHT | 5.29 MILLIMETERS MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HIGH SPEED AND LOW POWER AND W/ENABLE AND STATIC OPERATION |
CQSJ | INCLOSURE MATERIAL | PLASTIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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