The parts under NSN 5962-01-234-8713 of Microcircuit Memory manufactured by Raytheon Technical Services Company, Intel Corporation is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5962-01-234-8713 from this webpage, and one of our account managers will give you a quote for parts like 5012971-001, 2716-IP, 5072487-005 within fifteen minutes.
| Alternative NSN: 5962-01-234-8713 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012348713 |
| NCB Code: USA (01) |
| Manufacturers: Intel Corporation , Raytheon Technical Services Company |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 5012971-001 | raytheon technical services company | microcircuit memory | Avl | RFQ |
| 2716-IP | intel corporation | microcircuit memory | Avl | RFQ |
| 5072487-005 | raytheon technical services company | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING525 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDULTRAVIOLET ERASABLE AND PROGRAMMABLE AND STATIC OPERATION |
| MEMORY | CQWX | OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN13 INPUT |
| MEMORY | CRHL | BIT QUANTITY16384 |
| MEMORY | CSWJ | WORD QUANTITY2048 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC6 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC450 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 450 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
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