The parts under NSN 5962-01-214-3227 of Microcircuit Memory manufactured by Freescale Semiconductor Inc, Sri International, Stmicroelectronics Ltd, Mcdonnell Douglas Corp, Thales Electronic Systems Gmbh is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5962-01-214-3227 from this webpage, and one of our account managers will give you a quote for parts like MCM6810BJBA, GEM39721BJA, EF6810CMB B, B77T0460-0143, 52597 28001 within fifteen minutes.
Alternative NSN: 5962-01-214-3227 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012143227 |
NCB Code: USA (01) |
Manufacturers: Exelis Inc , Freescale Semiconductor Inc , Mcdonnell Douglas Corp , Sri International , Stmicroelectronics Ltd , Thales Electronic Systems Gmbh |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
MCM6810BJBA | freescale semiconductor inc | microcircuit memory | Avl | RFQ |
GEM39721BJA | sri international | microcircuit memory | Avl | RFQ |
EF6810CMB B | stmicroelectronics ltd | microcircuit memory | Avl | RFQ |
B77T0460-0143 | mcdonnell douglas corp | microcircuit memory | Avl | RFQ |
52597 28001 | thales electronic systems gmbh | microcircuit memory | Avl | RFQ |
3130269G001 | exelis inc | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 210 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND 3-STATE OUTPUT AND BIDIRECTIONAL |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CRHL | BIT QUANTITY1024 |
MEMORY | CSWJ | WORD QUANTITY128 |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MAXIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | FEAT | SPECIAL FEATURESWARNING VOLTAGE SENSITIVE DEVICE |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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