The parts under NSN 5962-01-081-9132 of Microcircuit Memory manufactured by Bae Systems Controls Inc, Intel Corporation, Honeywell International Inc, Ge Aviation Systems Llc, Freescale Semiconductor Inc is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5962-01-081-9132 from this webpage, and one of our account managers will give you a quote for parts like 438251-01, MB2716 B, MD2716M B, MD2716 B, 4038935-416 within fifteen minutes.
| Alternative NSN: 5962-01-081-9132 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010819132 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Bae Systems Controls Inc , Fairchild Semiconductor Corporation , Freescale Semiconductor Inc , Ge Aviation Systems Llc , Honeywell International Inc , Intel Corporation , National Semiconductor Corp , Raytheon Company , Saab Ab Publ Business Area Surveillance Ew Systems , Saab Ab Publ Business Area Surveillance Ew Systems Jarfalla , Texas Instruments Incorporated , Thales Usa Inc |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 150 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND POSITIVE OUTPUTS AND HERMETICALLY SEALED AND WENABLE AND WDECODED OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND WBUFFERED OUTPUT AND 3-STATE OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN11 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC26 5 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC120 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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