The parts under NSN 5962-01-073-8366 of Microcircuit Memory manufactured by Raytheon Company, L 3 Communications Corporation, Dla Land And Maritime, Advanced Micro Devices Inc is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5962-01-073-8366 from this webpage, and one of our account managers will give you a quote for parts like 615755-901, A633-1, DMS 88061B, AM91L30BDM, AM91L30DDC within fifteen minutes.
| Alternative NSN: 5962-01-073-8366 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010738366 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Dla Land And Maritime , L 3 Communications Corporation , Raytheon Company |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 615755-901 | raytheon company | microcircuit memory | Avl | RFQ |
| A633-1 | l 3 communications corporation | microcircuit memory | Avl | RFQ |
| DMS 88061B | dla land and maritime | microcircuit memory | Avl | RFQ |
| AM91L30BDM | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| AM91L30DDC | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MINIMUM AND 1.110 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.390 INCHES MINIMUM AND 0.410 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.080 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.25 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND LOW POWER AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 19 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 22 PRINTED CIRCUIT |
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