With our selection consisting of popular NSN 5961-01-357-4779 part numbers like 204-0175-012, BB409E7762, and other relevant offerings, ASAP Aviation Stock serves as the premier purchasing platform for fulfilling countless project needs. As you explore our catalog for NSN 5961-01-357-4779 on this page, take note that we have provided a variety of data and resources to aid you in your search for exact items. If any Semiconductor Device Set listing that we have featured piques your interest, you can always click on the “RFQ” button next to it to access a quote request form that can be submitted at any time to receive procurement options from our staff.
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| Alternative NSN: 5961-01-357-4779 |
| Item Name:Semiconductor Device Set |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 013574779 |
| NCB Code: USA (01) |
| Manufacturers: Rockwell Collins Inc , Siemens Corp |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 204-0175-012 | rockwell collins inc | semiconductor device set | Avl | RFQ |
| BB409E7762 | siemens corp | semiconductor device set | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.175 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.075 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | 82 SEMICONDUCTOR DEVICE DIODE |
| AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE AND BURN IN |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE VARIABLE CAPACITOR |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
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