The parts under NSN 5961-01-180-2896 of Semiconductor Device Diode manufactured by Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems, Bae Systems Integrated System Technologies Ltd, Microsemi Corp, Micro Uspd Inc, Gec Marconi Avionics Ltd is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5961-01-180-2896 from this webpage, and one of our account managers will give you a quote for parts like 6011584-001, 415 4 05645, 1N5767, 1901-0003 within fifteen minutes.
| Alternative NSN: 5961-01-180-2896 |
| Item Name:Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 011802896 |
| NCB Code: USA (01) |
| Manufacturers: Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems , Bae Systems Integrated System Technologies Ltd , Br Communications Inc , Gec Marconi Avionics Ltd , Micro Uspd Inc , Microsemi Corp |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 6011584-001 | bae systems information and electronic systems integration inc div bae systems | semiconductor device diode | Avl | RFQ |
| 415 4 05645 | bae systems integrated system technologies ltd | semiconductor device diode | Avl | RFQ |
| 1N5767 | microsemi corp | semiconductor device diode | Avl | RFQ |
| 1N5767 | micro uspd inc | semiconductor device diode | Avl | RFQ |
| 415 4 05645 | gec marconi avionics ltd | semiconductor device diode | Avl | RFQ |
| 1901-0003 | br communications inc | semiconductor device diode | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| DIODE | ABBH | INCLOSURE MATERIALGLASS |
| DIODE | ABHP | OVERALL LENGTH0 170 INCHES MAXIMUM |
| DIODE | ABJT | TERMINAL LENGTH0 975 INCHES MINIMUM |
| DIODE | ADAV | OVERALL DIAMETER0 068 INCHES MINIMUM AND 0 076 INCHES MAXIMUM |
| DIODE | AFZC | FUNCTION FOR WHICH DESIGNEDSWITCHING |
| DIODE | AXGY | MOUNTING METHODTERMINAL |
| DIODE | CBBL | FEATURES PROVIDEDBURN IN AND HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |
| DIODE | CTMZ | SEMICONDUCTOR MATERIALSILICON |
| DIODE | CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100 0 MAXIMUM REVERSE VOLTAGE INSTANTANEOUS |
| DIODE | CTQX | CURRENT RATING PER CHARACTERISTIC10 00 MICROAMPERES FORWARD CURRENT AVERAGE PEAK |
| DIODE | CTRD | POWER RATING PER CHARACTERISTIC250 0 MILLIWATTS SMALL-SIGNAL INPUT POWER COMMON-COLLECTOR PRESET |
| DIODE | CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150 0 DEG CELSIUS AMBIENT AIR |
| DIODE | PMLC | PRECIOUS MATERIAL AND LOCATIONTERMINAL SURFACES SILVER |
| DIODE | PRMT | PRECIOUS MATERIALSILVER |
| DIODE | TTQY | TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD |
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