The parts under NSN 5961-01-168-3230 of Semiconductor Device Diode manufactured by Vishay Intertechnology Inc, General Semiconductor Inc, Electronic Industries Inc, Datron World Communications Inc is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5961-01-168-3230 from this webpage, and one of our account managers will give you a quote for parts like 1N6283A-E3, 1N6283A, RELEASE6741B, 320211 within fifteen minutes.
| Alternative NSN: 5961-01-168-3230 |
| Item Name:Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 011683230 |
| NCB Code: USA (01) |
| Manufacturers: Datron World Communications Inc , Electronic Industries Inc , General Semiconductor Inc , Vishay Intertechnology Inc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 1N6283A-E3 | vishay intertechnology inc | semiconductor device diode | Avl | RFQ |
| 1N6283A | general semiconductor inc | semiconductor device diode | Avl | RFQ |
| 1N6283A | electronic industries inc | semiconductor device diode | Avl | RFQ |
| RELEASE6741B | electronic industries inc | semiconductor device diode | Avl | RFQ |
| 320211 | datron world communications inc | semiconductor device diode | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| DIODE | ABBH | INCLOSURE MATERIALGLASS |
| DIODE | ABHP | OVERALL LENGTH0 375 INCHES MAXIMUM |
| DIODE | ABJT | TERMINAL LENGTH1 100 INCHES MINIMUM |
| DIODE | ADAV | OVERALL DIAMETER0 295 INCHES MAXIMUM |
| DIODE | AXGY | MOUNTING METHODTERMINAL |
| DIODE | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED CASE |
| DIODE | CTMZ | SEMICONDUCTOR MATERIALSILICON |
| DIODE | CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC28 2 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| DIODE | CTQX | CURRENT RATING PER CHARACTERISTIC1 00 MILLIAMPERES FORWARD CURRENT AVERAGE PEAK AND 33 00 AMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT ANY ACCEPTABLE |
| DIODE | CTRD | POWER RATING PER CHARACTERISTIC5 0 WATTS SMALL-SIGNAL INPUT POWER COMMON-EMITTER PEAK |
| DIODE | TTQY | TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD |
| DIODE | ZZZK | SPECIFICATIONSTANDARD DATA80131-RELEASE6741B PROFESSIONALINDUSTRIAL ASSOCIATION SPECIFICATION |
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