The parts under NSN 5961-01-030-7248 of Semiconductor Device Diode manufactured by Spectrum Microwave Inc, Thales Nederland B V, Semtech Corporation, Semitronics Corp, Raytheon Company is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5961-01-030-7248 from this webpage, and one of our account managers will give you a quote for parts like 1N5184, 352250010279, SCE100, G227796-1, 5961PL1442786 within fifteen minutes.
| Alternative NSN: 5961-01-030-7248 |
| Item Name:Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010307248 |
| NCB Code: USA (01) |
| Manufacturers: Electronic Industries Inc , Elettronica Gmbh , Inspektorat Wsparcia Sil Zbrojnych , Pd And E Electronics Llc , Raytheon Company , Semitronics Corp , Semtech Corporation , Spectrum Microwave Inc , Thales Nederland B V |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 1N5184 | spectrum microwave inc | semiconductor device diode | Avl | RFQ |
| 352250010279 | thales nederland b v | semiconductor device diode | Avl | RFQ |
| SCE100 | semtech corporation | semiconductor device diode | Avl | RFQ |
| 1N5184 | semtech corporation | semiconductor device diode | Avl | RFQ |
| 1N5184 | semitronics corp | semiconductor device diode | Avl | RFQ |
| G227796-1 | raytheon company | semiconductor device diode | Avl | RFQ |
| 1N5184 | pd and e electronics llc | semiconductor device diode | Avl | RFQ |
| 5961PL1442786 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | Avl | RFQ |
| 522-281-015 | elettronica gmbh | semiconductor device diode | Avl | RFQ |
| RELEASE5312 | electronic industries inc | semiconductor device diode | Avl | RFQ |
| 1N5184 | electronic industries inc | semiconductor device diode | Avl | RFQ |
| 618446-2 | raytheon company | semiconductor device diode | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.410 INCHES NOMINAL |
| ADAV | OVERALL DIAMETER | 0.140 INCHES NOMINAL |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES FORWARD CURRENT, AVERAGE MAXIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5312 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
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