The parts under NSN 5961-00-883-8906 of Semiconductor Device Diode manufactured by Hollingsworth John R Co, Ge Aviation Systems Llc, Electronic Industries Inc, E2v Semiconductors, Bogue Electric Manufacturing Co is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5961-00-883-8906 from this webpage, and one of our account managers will give you a quote for parts like JHP111-131, 40-666-3498-01U, 04938, 1N9578, D17259-3 within fifteen minutes.
| Alternative NSN: 5961-00-883-8906 |
| Item Name:Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 008838906 |
| NCB Code: USA (00) |
| Manufacturers: Adelco Elektronik Gmbh , Alcatel Lucent France , Basler Electric Company , Bogue Electric Manufacturing Co , E2v Semiconductors , Electronic Industries Inc , Ge Aviation Systems Llc , General Motors Corp , Hollingsworth John R Co , Inspektorat Wsparcia Sil Zbrojnych , International Rectifier Corporation , Nai Technologies Inc , Raytheon Company , Rockwell Collins Inc , Texas Instruments Incorporated , Thales Nederland B V , Thales Usa Inc , Ward Leonard Electric Company Inc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| JHP111-131 | hollingsworth john r co | semiconductor device diode | Avl | RFQ |
| 40-666-3498-01U | ge aviation systems llc | semiconductor device diode | Avl | RFQ |
| 04938 | electronic industries inc | semiconductor device diode | Avl | RFQ |
| 1N9578 | e2v semiconductors | semiconductor device diode | Avl | RFQ |
| D17259-3 | bogue electric manufacturing co | semiconductor device diode | Avl | RFQ |
| 04938 | basler electric company | semiconductor device diode | Avl | RFQ |
| RZ6-8 | alcatel lucent france | semiconductor device diode | Avl | RFQ |
| JAN1N3016BA | adelco elektronik gmbh | semiconductor device diode | Avl | RFQ |
| 3191924 | general motors corp | semiconductor device diode | Avl | RFQ |
| 1N3016B | general motors corp | semiconductor device diode | Avl | RFQ |
| A15768-1 | ge aviation systems llc | semiconductor device diode | Avl | RFQ |
| 353-3046-000 | rockwell collins inc | semiconductor device diode | Avl | RFQ |
| 5961PL1385065 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | Avl | RFQ |
| VBE890-1N3016B | thales nederland b v | semiconductor device diode | Avl | RFQ |
| 1N3016B | ward leonard electric company inc | semiconductor device diode | Avl | RFQ |
| 353-3121-000 | rockwell collins inc | semiconductor device diode | Avl | RFQ |
| JAN1N3016B | texas instruments incorporated | semiconductor device diode | Avl | RFQ |
| 352250010077 | thales nederland b v | semiconductor device diode | Avl | RFQ |
| MZ6-8V01 | international rectifier corporation | semiconductor device diode | Avl | RFQ |
| 883386 | nai technologies inc | semiconductor device diode | Avl | RFQ |
| 848117-0001 | thales usa inc | semiconductor device diode | Avl | RFQ |
| 4178600-83 | raytheon company | semiconductor device diode | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 37.00 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC AND 140.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
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