The parts under NSN 5961-00-846-4922 of Semiconductor Device Diode manufactured by Rockwell Collins Inc, Rockwell Collins France, Alcatel Usa Inc is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5961-00-846-4922 from this webpage, and one of our account managers will give you a quote for parts like 353-2891-000, 353-2891-00 within fifteen minutes.
| Alternative NSN: 5961-00-846-4922 |
| Item Name:Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 008464922 |
| NCB Code: USA (00) |
| Manufacturers: Alcatel Usa Inc , Rockwell Collins France , Rockwell Collins Inc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 353-2891-000 | rockwell collins inc | semiconductor device diode | Avl | RFQ |
| 353-2891-00 | rockwell collins inc | semiconductor device diode | Avl | RFQ |
| 353-2891-000 | rockwell collins france | semiconductor device diode | Avl | RFQ |
| 353-2891-000 | alcatel usa inc | semiconductor device diode | Avl | RFQ |
| 353-2891-00 | alcatel usa inc | semiconductor device diode | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.500 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 1.250 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.380 INCHES NOMINAL |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.6 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
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