The parts under NSN 5961-00-252-1066 of Semiconductor Device Thyristor manufactured by N A P Smd Technology Inc, Micro Uspd Inc, Kearfott Corporation, Gilbert Engineering Company, General Electric Company is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5961-00-252-1066 from this webpage, and one of our account managers will give you a quote for parts like 2N2326, C531000514, TSD198, C5BR1200 within fifteen minutes.
| Alternative NSN: 5961-00-252-1066 |
| Item Name:Semiconductor Device Thyristor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 002521066 |
| NCB Code: USA (00) |
| Manufacturers: General Electric Company , Gilbert Engineering Company , Kearfott Corporation , Micro Uspd Inc , N A P Smd Technology Inc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 2N2326 | n a p smd technology inc | semiconductor device thyristor | Avl | RFQ |
| 2N2326 | micro uspd inc | semiconductor device thyristor | Avl | RFQ |
| C531000514 | kearfott corporation | semiconductor device thyristor | Avl | RFQ |
| 2N2326 | gilbert engineering company | semiconductor device thyristor | Avl | RFQ |
| TSD198 | gilbert engineering company | semiconductor device thyristor | Avl | RFQ |
| C5BR1200 | general electric company | semiconductor device thyristor | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS AND METAL |
| ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM BREAKOVER VOLTAGE, DC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 15.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS CASE |
| FEAT | SPECIAL FEATURES | INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN |
| TEST | TEST DATA DOCUMENT | 88818-C531000514 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING D |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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