The parts under NSN 5961-00-232-3279 of Semiconductor Device Diode manufactured by E C A Etablissement Central, Hewlett Packard Company, Hensoldt Sensors Gmbh Div Seps, Hensoldt Sensors Gmbh, Giordano Associates Inc is available in our inventory. An ASAP Semiconductor Website, ASAP Aviation Stock has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our inventory quickly and efficiently. Our focus on quality control has earned us our AS9120B, ISO 9001:2015, and FAA 0056B certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send us a Request for Quote for the parts with 5961-00-232-3279 from this webpage, and one of our account managers will give you a quote for parts like 5961002323279, 5082-8327, 5M.5532.222.93, Q68000A3614Z, AP106346M within fifteen minutes.
| Alternative NSN: 5961-00-232-3279 |
| Item Name:Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 002323279 |
| NCB Code: USA (00) |
| Manufacturers: Adelco Elektronik Gmbh , Autek Systems Corp , E C A Etablissement Central , Eip Microwave Inc , Fei Microwave Inc , G E C Marconi Communications Ltd , Giordano Associates Inc , Hensoldt Sensors Gmbh , Hensoldt Sensors Gmbh Div Seps , Hewlett Packard Company , Honeywell International Inc , Honeywell Regelsysteme , Joint Electron Device Engineering , Lacon Electronic Gmbh , Logimetrics Inc , Raytheon Company , Raytheon Systems Ltd , Rohde And Schwarz Gmbh And Co Kg , Selex Communications Inc , Selex Es Limited , Sensor And Antenna Systems , Siemens Air Traffic Management , Systron Donner Corp , Thales Electronic Systems Gmbh , Thales Optronics Limited , Thales Optronics Taunton Ltd , Thales Sa , Thales Uk Limited , Thales Usa Inc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 5961002323279 | e c a etablissement central | semiconductor device diode | Avl | RFQ |
| 5082-8327 | hewlett packard company | semiconductor device diode | Avl | RFQ |
| 5M.5532.222.93 | hensoldt sensors gmbh div seps | semiconductor device diode | Avl | RFQ |
| Q68000A3614Z | hensoldt sensors gmbh | semiconductor device diode | Avl | RFQ |
| AP106346M | giordano associates inc | semiconductor device diode | Avl | RFQ |
| PS202481 | g e c marconi communications ltd | semiconductor device diode | Avl | RFQ |
| SS10222-1 | g e c marconi communications ltd | semiconductor device diode | Avl | RFQ |
| A2X871 | fei microwave inc | semiconductor device diode | Avl | RFQ |
| 2710006-00 | eip microwave inc | semiconductor device diode | Avl | RFQ |
| 167-0270 | autek systems corp | semiconductor device diode | Avl | RFQ |
| JAN1N5711A | adelco elektronik gmbh | semiconductor device diode | Avl | RFQ |
| JAN1N5711 | hewlett packard company | semiconductor device diode | Avl | RFQ |
| 0937 | hewlett packard company | semiconductor device diode | Avl | RFQ |
| HP5082-2800 | hewlett packard company | semiconductor device diode | Avl | RFQ |
| 5041-707 | raytheon company | semiconductor device diode | Avl | RFQ |
| JANHP5082-2800 | hewlett packard company | semiconductor device diode | Avl | RFQ |
| 5082-2857 | hewlett packard company | semiconductor device diode | Avl | RFQ |
| 4586563 | rohde and schwarz gmbh and co kg | semiconductor device diode | Avl | RFQ |
| 1N5711JANTX | hewlett packard company | semiconductor device diode | Avl | RFQ |
| 12057-0001 | honeywell international inc | semiconductor device diode | Avl | RFQ |
| 43912003-500 | honeywell regelsysteme | semiconductor device diode | Avl | RFQ |
| 1N5711 | joint electron device engineering | semiconductor device diode | Avl | RFQ |
| JAN1N5711A | lacon electronic gmbh | semiconductor device diode | Avl | RFQ |
| 610065 | logimetrics inc | semiconductor device diode | Avl | RFQ |
| 772604-1 | raytheon company | semiconductor device diode | Avl | RFQ |
| 100442 | systron donner corp | semiconductor device diode | Avl | RFQ |
| 4178600-595 | raytheon company | semiconductor device diode | Avl | RFQ |
| 415 4 98532 | siemens air traffic management | semiconductor device diode | Avl | RFQ |
| 565205 | selex communications inc | semiconductor device diode | Avl | RFQ |
| 925095-1 | raytheon company | semiconductor device diode | Avl | RFQ |
| VA70-0036-1 | selex es limited | semiconductor device diode | Avl | RFQ |
| PS202481 | selex es limited | semiconductor device diode | Avl | RFQ |
| 1813234 | thales uk limited | semiconductor device diode | Avl | RFQ |
| SS10222-1 | selex es limited | semiconductor device diode | Avl | RFQ |
| SM301-F-070-220G | raytheon systems ltd | semiconductor device diode | Avl | RFQ |
| 3450725-1 | sensor and antenna systems | semiconductor device diode | Avl | RFQ |
| 44397 28143 | thales electronic systems gmbh | semiconductor device diode | Avl | RFQ |
| 2361-0381 | thales optronics limited | semiconductor device diode | Avl | RFQ |
| 44321 00110 | thales electronic systems gmbh | semiconductor device diode | Avl | RFQ |
| 88871-01 | thales uk limited | semiconductor device diode | Avl | RFQ |
| 1865315 | thales uk limited | semiconductor device diode | Avl | RFQ |
| 2361-0381 | thales optronics taunton ltd | semiconductor device diode | Avl | RFQ |
| 99078290 | thales sa | semiconductor device diode | Avl | RFQ |
| 848152-0001 | thales usa inc | semiconductor device diode | Avl | RFQ |
| 848173-0001 | thales usa inc | semiconductor device diode | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 33.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/444 GOVERNMENT SPECIFICATION |
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